dcr4330m52 phase control thyristor ds5941 - 3 a pril 2013 (ln 30251 ) 1 /10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr4330m52* dcr4330m50 dcr4330m45 5200 5000 4500 t vj = - 40c to 125c, i drm = i rrm = 300ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. *5000v @ - 40 o c, 5200v @ 0 o c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr4330m52 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 5200v i t(av) 4325a i tsm 53400a dv/dt* 2000v/s di/dt 400a/s * higher dv/dt selections available (see package details for further information) fig. 1 package outline
semiconductor dcr4330m52 2 /10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 4325 a i t(rms) rms value - 6790 a i t continuous (direct) on - state current - 6250 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 53.4 ka i 2 t i 2 t for fusing v r = 0 14.25 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00518 c/w single side cooled anode dc - 0.01012 c/w cathode dc - 0.01080 c/w r th(c - h) thermal resistance C case to heatsink clamping force 83.0kn double side - 0.001 c/w (with mounting compound) single side - 0.002 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 74.0 91.0 kn
semiconductor dcr4330m52 3 /10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 300 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 2000 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 400 a/s gate source 30v, 10 ? , non - repetitive - 1000 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 1000 to 2600a at t case = 125c - 0.85 v threshold voltage C high level 2600 to 9000a at t case = 125c - 0.99 v r t on - state slope resistance C low level 1000 to 2600a at t case = 125c - 0.2115 m ? on - state slope resistance C high level 2600 to 9000a at t case = 125c - 0.1578 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/s, 750 s dv dr /dt = 20v/s linear q s stored charge i t = 3000a, t j = 125c, di/dt C 1a/s, v rpeak ~3100v, v r ~ 2100v 4030 5420 c i rr reverse recovery current 49 59 a i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr4330m52 4 /10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 4 00 ma i gd gate non - trigger current at 50% v drm, t case = 125c 10 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.061592 b = 0.115333 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000119 d = 0.002394 these values are valid for t j = 125c for i t 250a to 9000a 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 0.5 1 1.5 2 2.5 instantaneous on-state voltage , v t - (v) instantaneous on-staate current, i t - (a) min @ 125oc max @ 125oc max @ 25oc min @ 25oc
semiconductor dcr4330m52 5 /10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 2 4 6 8 10 12 0 500 1000 1500 2000 2500 3000 3500 4000 4500 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 3500 4000 4500 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 25 50 75 100 125 0 500 1000 1500 2000 2500 3000 3500 4000 4500 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( c) 180 120 90 60 30 0 2 4 6 8 10 12 14 16 0 500 1000 1500 2000 2500 3000 3500 4000 4500 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor dcr4330m52 6 /10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? 0 25 50 75 100 125 0 500 1000 1500 2000 2500 3000 3500 4000 4500 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case -( c) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 500 1000 1500 2000 2500 3000 3500 4000 4500 mean on-state current, i t(av ) - (a) maximum heatsink temperature t heatsink -( o c) d.c. 180 120 90 60 30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.001 0.01 0.1 1 10 100 time ( s ) transient thermal impedance, zth - ( c/kw ) anode side cooled. double side cooled. cathode side cooled. 1 2 3 4 r i (c/kw) 1.995338 1.242784 1.9448 0.005 0.05 0.592935 0.592385 110.5108 r i (c/kw) 6.092995 1.957372 2.042252 0.035908 5.459764 0.510898 0.05 110.1735 r i (c/kw) 6.856845 1.876401 2.062845 0.025343 5.181139 0.557321 0.05 110.1546 double side cooled anode side cooled cathode side cooled t i (s) t i (s) t i (s) ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 0.51 0.36 180 0.51 0.36 180 0.51 0.36 120 0.57 0.49 120 0.58 0.50 120 0.58 0.50 90 0.64 0.56 90 0.65 0.57 90 0.65 0.57 60 0.70 0.63 60 0.71 0.64 60 0.71 0.64 30 0.74 0.71 30 0.75 0.71 30 0.75 0.71 15 0.76 0.74 15 0.77 0.75 15 0.77 0.75
semiconductor dcr4330m52 7 /10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 stored charge fig.13 reverse recovery current 1 10 100 1 10 100 number of cycles surge current, i tsm - (ka) conditions: tcase = 125c v r =0 pulse width = 10ms 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 1 10 100 pulse width, t p - (ms) surge current, i tsm - (ka) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 i 2 t (ma 2 s) i 2 t i tsm conditions: t case = 125c v r = 0 half-sine wave 0 5000 10000 15000 20000 25000 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) stored charge, qs - (uc) qs min = 4030.8*(di/dt) 0.5002 qs max = 5413.5*(di/dt) 0.4762 conditions: tj= 125oc v rpeak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse voltage 0 100 200 300 400 500 600 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) reverse recovery current, i rr - (a) conditions : tj = 125oc v rpeak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse voltage i rrmax = 58.296*(di/dt) 0.7559 i rrmin = 49.567*(di/dt) 0.7701
semiconductor dcr4330m52 8 /10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c
semiconductor dcr4330m52 9 /10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1950 g lead length: 420mm lead terminal connector: m4 ring package outline type code: m fig.16 package outline device maximum thickness (mm) minimum thickness (mm) 22ct93m 25.815 25.305 28ct93m 25.89 25.38 42ct93m 26.12 25.61 dcr4330m52 26.26 25.75 dcr3480m65 26.5 25.99 dcr2760m85 26.84 26.33
semiconductor dcr4330m52 10 /10 www.dynexsemi.com important information: the products and data in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product inform ation be needed please contact customer service. this publication is an uncontrolled document and is subject to change without notice. when referring to it , please ensure that it is the most up to date version and has not been superseded. the products ar e not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or m alfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected an y electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure outside the product ratings may affect reliability leading to premature product failure. use outside the prod uct ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate a pplication design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: t he product design is complete and final characterisation for volume production is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless othe rwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to the company's conditions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: + 44 (0) 1522 502753 / 502901 fax: + 44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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